Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se{sub 2} solar cells
- Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), UMR 7174 – EDF – CNRS – Chimie Paristech, 6 quai Watier, 78401 Chatou (France)
Thin films of Zn(O,S) were deposited by atomic layer deposition from diethylzinc, water (H{sub 2}O), and hydrogen sulfide (H{sub 2}S). First, a study on the influence of the H{sub 2}S/(H{sub 2}O+H{sub 2}S) pulse ratio from pure ZnO to pure ZnS was performed at deposition temperature T{sub dep}=120 and 200 °C. Zn(O,S) films had higher S content than expected, and this effect was stronger at T{sub dep}=200 °C. Then, Zn(O,S) films have been synthesized over the range of temperature 120–220 °C at the constant H{sub 2}S/(H{sub 2}O+H{sub 2}S) pulse ratio of 9%. For T{sub dep}<180 °C, high and almost constant S content has been measured in the films. The significant increase of the S/(O+S) atomic ratio for T{sub dep}>180 °C confirmed that exchange reactions occurred between the Zn(O,S) growing films and H{sub 2}S. The grazing incidence x-ray diffraction patterns showed Zn(O,S) films with hexagonal wurtzite structures and with an optimum crystallization for temperatures T{sub dep}=160–180 °C. Indeed, in this temperature range, well crystallized and large grains were obtained which was in good correlation with the film morphology determined by scanning electron microscope; and Hall effect measurements revealed low resistivities, high carrier concentrations (>10{sup 19} cm{sup −3}), and low mobilities. From these results, the authors propose the existence of a temperature range where the properties undergo significant changes while the atomic composition remains constant.
- OSTI ID:
- 22392123
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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