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Title: Improved film quality of plasma enhanced atomic layer deposition SiO{sub 2} using plasma treatment cycle

Chemical, physical, and electrical characteristics of high quality silicon dioxide (SiO{sub 2}) films grown using low temperature plasma enhanced atomic layer deposition (PE-ALD) have been investigated as a buffer layer for three dimensional vertical NAND flash memory devices. The comparative angle resolved x-ray photoelectron spectroscopy studies show the plasma treatment cycle causes to shift the core level binding energy (chemical shifts) in the SiO{sub 2} film. The wet etch rates with respect to plasma treatment cycle times were varied due to curing of the SiO{sub 2} network defects by Ar{sup +} ions and oxygen radicals. It is assumed that the angle between the bonds linking SiO{sub 4} tetrahedra is a critical point understanding the variation in wet etch rate of SiO{sub 2}. The features of wet etch rate of low temperature high quality SiO{sub 2} demonstrated lower than high temperature low-pressure chemical vapor deposition (LP-CVD) SiO{sub 2} values. In addition, the better step-coverage compared to that of the LP-CVD SiO{sub 2} film was achieved from the deep trench structure having the 20:1 aspect ratio. PE-ALD SiO{sub 2} with plasma treatment cycle showed excellent I–V properties with higher breakdown voltage compared to LP-CVD SiO{sub 2} and similar to the thermal SiO{submore » 2} carrier transport plot.« less
Authors:
 [1] ;  [2] ; ; ; ; ; ;  [3]
  1. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South Korea and Research and Development group, Eugene Technology, Yongin 449-824 (Korea, Republic of)
  2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  3. Research and Development group, Eugene Technology, Yongin 449-824 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22392119
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ARGON IONS; BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; FILMS; PLASMA; SILICA; SILICON OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY