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Title: Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared tomore » uncoated devices.« less
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands)
  2. Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy)
  3. Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)
Publication Date:
OSTI Identifier:
22392115
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; LAYERS; OXIDATION; SILICON CARBIDES; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; WATER VAPOR