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Title: Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200 °C. Growth rate of 1.3 Å per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films.
Authors:
;  [1] ;  [2]
  1. Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)
  2. Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)
Publication Date:
OSTI Identifier:
22392112
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ALUMINIUM SULFIDES; CRYSTAL GROWTH; CRYSTALS; DEPOSITS; FOURIER TRANSFORMATION; HYDROGEN SULFIDES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MICROBALANCES; QUARTZ; SURFACES; THIN FILMS; TIME-OF-FLIGHT METHOD