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Title: Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

The AlN/ZnO bilayer heterostructures were deposited on Si (100) substrate by thermal atomic layer deposition. X-ray diffraction results show that the crystallinity of polycrystalline ZnO layer is enhanced by amorphous AlN capping layer. Compared with ZnO thin film, ZnO/AlN bilayer with 10.7 nm AlN capping layer exhibits three times enhanced near band edge (NBE) emission from the photoluminescence measurements. In addition, the near band edge emission from the ZnO can be further increased by ∼10 times through rapid thermal annealing at 600 °C. The underlying mechanisms for the enhancement of the NBE emission after coating AlN capping layer and thermal treatment are discussed. These results suggest that coating of a thin AlN layer and sequential thermal treatments can effectively tailor the luminescence properties of ZnO film.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433 (China)
  2. Department of Electronic Engineering, Shanghai Jianqiao College, Shanghai 201319, China and School of Microelectronics, Fudan University, Shanghai 200433 (China)
Publication Date:
OSTI Identifier:
22392111
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ANNEALING; DEPOSITS; LAYERS; PHOTOLUMINESCENCE; POLYCRYSTALS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES