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Title: Characterization of Ru thin films from a novel CVD/atomic layer deposition precursor “Rudense” for capping layer of Cu interconnects

The authors have succeeded in development of a novel Ru precursor, Ru(EtCp)(η{sup 5}-CH{sub 2}C(Me)CHC(Me)O) [Rudense], for CVD and atomic layer deposition (ALD) processes under nonoxidative condition. Rudense has sufficient vapor pressure and good thermal stability (decomposition temperature = ca. 230 °C). Ru thin films were grown on Pt, Ru, Si, and SiO{sub 2} substrates using Rudense and NH{sub 3} as Ru precursor and reactant, respectively. Rudense gave the conformal, low-impurity (<10{sup 21} atoms/cc), and low-resistivity (16 μΩ cm) Ru thin films. Moreover, Rudense showed substrate selectivity; therefore, Rudense will be a candidate for area-selective CVD and ALD precursor for Ru capping layers of Cu interconnects.
Authors:
; ;  [1] ; ; ;  [2] ;  [3]
  1. TOSOH Corporation, 2743-1, Hayakawa, Ayase, Kanagawa 252-1123 (Japan)
  2. TOSOH Corporation, 2743-1, Hayakawa, Ayase, Kanagawa 252-1123, Japan and Sagami Chemical Research Institute, 2743-1, Hayakawa, Ayase, Kanagawa 252-1193 (Japan)
  3. Sagami Chemical Research Institute, 2743-1, Hayakawa, Ayase, Kanagawa 252-1193 (Japan)
Publication Date:
OSTI Identifier:
22392106
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMMONIA; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; IMPURITIES; LAYERS; PRECURSOR; SILICA; SILICON OXIDES; STABILITY; SUBSTRATES; THIN FILMS; VAPOR PRESSURE