Characterization of Ru thin films from a novel CVD/atomic layer deposition precursor “Rudense” for capping layer of Cu interconnects
- TOSOH Corporation, 2743-1, Hayakawa, Ayase, Kanagawa 252-1123 (Japan)
- TOSOH Corporation, 2743-1, Hayakawa, Ayase, Kanagawa 252-1123, Japan and Sagami Chemical Research Institute, 2743-1, Hayakawa, Ayase, Kanagawa 252-1193 (Japan)
- Sagami Chemical Research Institute, 2743-1, Hayakawa, Ayase, Kanagawa 252-1193 (Japan)
The authors have succeeded in development of a novel Ru precursor, Ru(EtCp)(η{sup 5}-CH{sub 2}C(Me)CHC(Me)O) [Rudense], for CVD and atomic layer deposition (ALD) processes under nonoxidative condition. Rudense has sufficient vapor pressure and good thermal stability (decomposition temperature = ca. 230 °C). Ru thin films were grown on Pt, Ru, Si, and SiO{sub 2} substrates using Rudense and NH{sub 3} as Ru precursor and reactant, respectively. Rudense gave the conformal, low-impurity (<10{sup 21} atoms/cc), and low-resistivity (16 μΩ cm) Ru thin films. Moreover, Rudense showed substrate selectivity; therefore, Rudense will be a candidate for area-selective CVD and ALD precursor for Ru capping layers of Cu interconnects.
- OSTI ID:
- 22392106
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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