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Title: Atmospheric pressure plasma enhanced spatial ALD of silver

The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18 μΩ cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120 °C.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven (Netherlands)
  2. TNO, High Tech Campus 21, 5656 AE Eindhoven (Netherlands)
  3. TNO, Rondom 1, 5612 AP Eindhoven, The Netherlands and DWI Leibniz-Institut für Interaktive Materialien, Aachen (Germany)
  4. TNO, High Tech Campus 21, 5656 AE Eindhoven, The Netherlands and Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22392104
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; ATMOSPHERIC PRESSURE; DEPOSITION; DIELECTRIC MATERIALS; FILMS; PLASMA; SILVER; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; X RADIATION