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Title: Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{sub 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)
  2. Department of Chemistry, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)
Publication Date:
OSTI Identifier:
22392101
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITION; FILMS; METHACRYLIC ACID ESTERS; MORPHOLOGY; NUCLEATION; PMMA; POROUS MATERIALS; ROUGHNESS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION; ZINC OXIDES