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Title: Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.
Authors:
; ; ;  [1] ;  [2] ; ;  [3]
  1. Institute of Physics, University of Tartu, Ravila 14c, EE-50411 Tartu (Estonia)
  2. University of Helsinki, FI-00014 Helsinki (Finland)
  3. National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia)
Publication Date:
OSTI Identifier:
22392100
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COERCIVE FORCE; CRYSTAL GROWTH; CRYSTALS; DEPOSITS; DOPED MATERIALS; DYSPROSIUM; DYSPROSIUM OXIDES; MICROBALANCES; SATURATION; SILICON; SUBSTRATES; THIN FILMS; TITANIUM CHLORIDES; TITANIUM OXIDES