Effects of rapid thermal annealing on the properties of HfO{sub 2}/La{sub 2}O{sub 3} nanolaminate films deposited by plasma enhanced atomic layer deposition
- State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China and University of Chinese Academy of Sciences, Beijing 100049 (China)
- Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States)
In this work, HfO{sub 2}/La{sub 2}O{sub 3} nanolaminate films were deposited on Si substrates by plasma enhanced atomic layer deposition with in situ plasma treatment. Different annealing treatments were adopted to change films structure and performance. The upper HfO{sub 2} layers in HfO{sub 2}/La{sub 2}O{sub 3} nanolaminates were easily crystallized after annealing at 800 °C, while all the La{sub 2}O{sub 3} layers kept amorphous. X-ray photoelectron spectroscopy results indicated that LaO(OH) and La(OH){sub 3} peaks became weak, H{sub 2}O molecules in laminates evaporated during high-temperature annealing. Band diagram analysis showed that valence band offset and band gap widened after 800 °C annealing. Annealing, especially 800 °C annealing, had gentle effect on leakage current, but could obviously change capacitance and permittivity due to tetragonal and cubic phase formed in the HfO{sub 2} film.
- OSTI ID:
- 22392091
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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