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Title: Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.
Authors:
; ;  [1]
  1. School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22392082
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; LAYERS; NIOBIUM; NIOBIUM COMPOUNDS; NIOBIUM NITRIDES; NITRIDES; OXYGEN COMPOUNDS; RANDOMNESS; RESISTORS; SWITCHES