Contact-dependent performance variability of monolayer MoS{sub 2} field-effect transistors
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)
Using self-consistent quantum transport simulations, we investigate the performance variability of monolayer molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) with various contact properties. Varying the Schottky barrier in MoS{sub 2} FETs affects the output characteristics more significantly than the transfer characteristics. If doped contacts are realized, the performance variation due to non-ideal contacts becomes negligible; otherwise, channel doping can effectively suppress the performance variability in metal-contact devices. Our scaling study also reveals that for sub-10-nm channels, doped-contact devices can be more robust in terms of switching, while metal-contact MoS{sub 2} FETs can undergo the smaller penalty in output conductance.
- OSTI ID:
- 22392081
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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