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Title: Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.
Authors:
;  [1] ; ; ; ;  [2]
  1. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Texas Instruments, Inc., Richardson, Texas 75243 (United States)
Publication Date:
OSTI Identifier:
22392080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; METALS; OXIDES; PERFORMANCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SILICON; TRANSISTORS