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Title: Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

This paper reports on the degradation and recovery of two different series of commercially available InGaN-based blue light emitting diodes submitted to proton irradiation at 3 MeV and various fluences (10{sup 11}, 10{sup 13}, and 10{sup 14} p{sup +}/cm{sup 2}). After irradiation, we detected (i) an increase in the series resistance, in the sub-turn-on current and in the ideality factor, (ii) a spatially uniform drop of the output optical power, proportional to fluence, and (iii) a reduction of the capacitance of the devices. These results suggest that irradiation induced the generation of non-radiative recombination centers near the active region. This hypothesis is further confirmed by the results of the recovery tests carried out at low temperature (150 °C)
Authors:
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  1. Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy)
Publication Date:
OSTI Identifier:
22392079
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GALLIUM NITRIDES; INDIUM COMPOUNDS; IRRADIATION; LIGHT EMITTING DIODES; MEV RANGE 01-10; PROTONS; RECOMBINATION