skip to main content

Title: Two-dimensional electron gas in monolayer InN quantum wells

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10{sup 15 }cm{sup −2} (or 1.25 × 10{sup 14 }cm{sup −2} per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm{sup 2}/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. Boston University, Boston, Massachusetts 02215 (United States)
  3. Princeton University, Princeton, New Jersey 08544 (United States)
Publication Date:
OSTI Identifier:
22392077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON GAS; GALLIUM NITRIDES; INDIUM; INDIUM NITRIDES; QUANTUM WELLS; SUPERLATTICES; TEMPERATURE DEPENDENCE