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Title: Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.
Authors:
 [1] ;  [2] ; ; ; ; ; ;  [1] ; ;  [3] ; ; ;  [4]
  1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. (China)
  3. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  4. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22392075
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; EFFICIENCY; ELECTRODES; FIELD EFFECT TRANSISTORS; GALLIUM ANTIMONIDES; GRAPHENE; HETEROJUNCTIONS; HOLES; INDIUM ARSENIDES; PHOTOELECTRIC EMISSION; PHOTOEMISSION; TUNNEL EFFECT