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Title: Measurement of the electrostatic edge effect in wurtzite GaN nanowires

The electrostatic effect of the hexagonal corner on the electronic structure in wurtzite GaN nanowires (NWs) was directly measured using Kelvin probe force microscopy (KPFM). By correlating electrostatic simulations with the measured potential difference between the nanowire face and the hexagonal vertices, the surface state concentration and band bending of GaN NWs were estimated. The surface band bending is important for an efficient design of high electron mobility transistors and for opto-electronic devices based on GaN NWs. This methodology provides a way to extract NW parameters without making assumptions concerning the electron affinity. We are taking advantage of electrostatic modeling and the high precision that KPFM offers to circumvent a major source of uncertainty in determining the surface band bending.
Authors:
;  [1] ;  [2] ; ; ;  [3]
  1. Department of Physical Electronics, School of Electrical Engineering, Tel-Aviv University, Ramat-Aviv 69978 (Israel)
  2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  3. NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305 (United States)
Publication Date:
OSTI Identifier:
22392071
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ELECTROSTATICS; GALLIUM NITRIDES; MICROSCOPY; NANOWIRES; SIMULATION; SURFACES