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Title: Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [2] ;  [3]
  1. School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
  2. Department of Materials, University of California, Santa Barbara, California 93106 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22392060
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COBALT COMPOUNDS; DOPED MATERIALS; EPITAXY; FERROMAGNETIC RESONANCE; FERROMAGNETISM; GALLIUM ARSENIDES; IRON COMPOUNDS; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SPIN; SPIN ORIENTATION; TUNNEL EFFECT