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Title: Ultrafast carrier dynamics in GaN nanorods

We present ultrafast time-resolved optical spectroscopy on GaN nanorods at room temperature. The studied GaN nanorods, with diameters of ∼50 nm and lengths of ∼400 nm, were grown on the silicon substrate. After femtosecond optical pulses excited carriers in the GaN nanorods, the carriers thermalized within a few picoseconds. Subsequently, the electrons are trapped by the surface states on the order of 20 ps. After the surface electric field was reformed in the GaN nanorods, we found the lifetime of the residue carriers in GaN nanorods is longer than 1.7 ns at room temperature, while the lifetime of carriers in GaN thin film is typically a few hundred picoseconds. Our findings indicate that GaN nanorods have higher electrical quality compared with GaN thin film.
Authors:
 [1] ;  [2] ;  [3] ; ;  [4] ;  [1]
  1. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
  2. (China)
  3. Department of Physics, National Taiwan Normal University, Taipei 106, Taiwan (China)
  4. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
Publication Date:
OSTI Identifier:
22392059
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDES; NANOSTRUCTURES; PULSES; SILICON; SPECTROSCOPY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIME RESOLUTION; TRAPPING