skip to main content

SciTech ConnectSciTech Connect

Title: Phase-coherent electron transport in (Zn, Al)O{sub x} thin films grown by atomic layer deposition

A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)O{sub x} thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al{sub 2}O{sub 3} sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length (l{sub φ}∝T{sup −3/4}), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.
Authors:
; ; ; ;  [1]
  1. Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)
Publication Date:
OSTI Identifier:
22392057
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CHARGE TRANSPORT; COHERENCE LENGTH; ELECTRON-ELECTRON COLLISIONS; ELECTRON-ELECTRON INTERACTIONS; ELECTRONS; MAGNETIC FIELDS; MAGNETORESISTANCE; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC OXIDES