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Title: Bi-induced band gap reduction in epitaxial InSbBi alloys

The properties of molecular beam epitaxy-grown InSb{sub 1−x}Bi{sub x} alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb{sub 0.976}Bi{sub 0.024}, a reduction of ∼35 meV/%Bi.
Authors:
; ; ; ;  [1] ;  [2] ; ; ;  [3] ; ;  [4]
  1. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom)
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
  3. Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)
  4. Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)
Publication Date:
OSTI Identifier:
22392056
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; BAND THEORY; BISMUTH COMPOUNDS; DROPLETS; ELECTRONIC STRUCTURE; FILMS; INDIUM ANTIMONIDES; LATTICE PARAMETERS; MEV RANGE 10-100; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION; ZINC SULFIDES