skip to main content

Title: Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

Nitrogen-doped Mg{sub 0.12}Zn{sub 0.88}O nanocrystalline thin film was grown on c-plane sapphire substrate. Asymmetric Ni/Au and Ti/Au Schottky contacts and symmetric Ni/Au contacts were deposited on the thin film to form metal-semiconductor-metal (MSM) laser devices. Current-voltage, photocurrent, and electroluminescence characterizations were performed. Evident random lasing with a threshold current of ∼36 mA is demonstrated only from the asymmetric MSM device. Random lasing peaks are mostly distributed between 340 and 360 nm and an output power of 15 nW is measured at 43 mA injection current. The electron affinity difference between the contact metal and Mg{sub 0.12}Zn{sub 0.88}O:N layer plays an important role for electron and hole injection and subsequent stimulated random lasing.
Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)
Publication Date:
OSTI Identifier:
22392052
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; CRYSTALS; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTROLUMINESCENCE; GOLD; LASERS; MAGNESIUM COMPOUNDS; NANOSTRUCTURES; NITROGEN; RANDOMNESS; SAPPHIRE; SEMICONDUCTOR MATERIALS; THIN FILMS; THRESHOLD CURRENT; TITANIUM; ULTRAVIOLET RADIATION; ZINC OXIDES