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Title: Effect of crystal quality on performance of spin-polarized photocathode

GaAs/GaAsP strain-compensated superlattices (SLs) with thickness up to 90-pair were fabricated. Transmission electron microscopy revealed the SLs are of high crystal quality and the introduced strain in SLs layers are fixed in the whole SL layers. With increasing SL pair number, the strain-compensated SLs show a less depolarization than the conventional strained SLs. In spite of the high crystal quality, the strain-compensated SLs also remain slightly depolarized with increasing SL pairs and the decrease in spin-polarization contributes to the spin relaxation time. 24-pair of GaAs/GaAsP strain-compensated SL demonstrates a maximum spin-polarization of 92% with a high quantum efficiency of 1.6%.
Authors:
 [1] ;  [2] ;  [3] ; ;  [4] ;  [5]
  1. Institute for Advanced Research, Nagoya University, Nagoya 464-8603 (Japan)
  2. NCEM, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  3. High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan)
  4. Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8602 (Japan)
  5. Nagoya Industrial Science Research Institute, Nagoya 4640819 (Japan)
Publication Date:
OSTI Identifier:
22392043
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTALS; DEPOLARIZATION; GALLIUM ARSENIDES; LAYERS; PHOSPHORUS; PHOTOCATHODES; QUANTUM EFFICIENCY; SPIN ORIENTATION; STRAINS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY