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Title: Growth and electrical characterization of two-dimensional layered MoS{sub 2}/SiC heterojunctions

The growth and electrical characterization of the heterojunction formed between two-dimensional (2D) layered p-molybdenum disulfide (MoS{sub 2}) and nitrogen-doped 4H silicon carbide (SiC) are reported. The integration of 2D semiconductors with the conventional three-dimensional (3D) substrates could enable semiconductor heterostructures with unprecedented properties. In this work, direct growth of p-type MoS{sub 2} films on SiC was demonstrated using chemical vapor deposition, and the MoS{sub 2} films were found to be high quality based on x-ray diffraction and Raman spectra. The resulting heterojunction was found to display rectification and current-voltage characteristics consistent with a diode for which forward conduction in the low-bias region is dominated by multi-step recombination tunneling. Capacitance-voltage measurements were used to determine the built-in voltage for the p-MoS{sub 2}/n-SiC heterojunction diode, and we propose an energy band line up for the heterostructure based on these observations. The demonstration of heterogeneous material integration between MoS{sub 2} and SiC enables a promising new class of 2D/3D heterostructures.
Authors:
; ; ;  [1] ; ;  [2] ;  [1] ;  [3]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22392039
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; FILMS; HETEROJUNCTIONS; MOLYBDENUM SULFIDES; NITROGEN; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; TWO-DIMENSIONAL SYSTEMS; X-RAY DIFFRACTION