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Title: High mobility field effect transistor based on BaSnO{sub 3} with Al{sub 2}O{sub 3} gate oxide

We fabricated an n-type accumulation-mode field effect transistor based on BaSnO{sub 3} transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn){sub 2}O{sub 3} as the source, drain, and gate electrodes, Al{sub 2}O{sub 3} as the gate insulator, and La-doped BaSnO{sub 3} as the semiconducting channel. The Al{sub 2}O{sub 3} gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8 cm{sup 2}/Vs and the I{sub on}/I{sub off} ratio value higher than 10{sup 5} for V{sub DS} = 1 V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO{sub 3} on SrTiO{sub 3} substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al{sub 2}O{sub 3} as well as the threading dislocations.
Authors:
; ; ; ; ;  [1]
  1. Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22392038
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; BARIUM COMPOUNDS; DEPOSITS; DOPED MATERIALS; ELECTRODES; FIELD EFFECT TRANSISTORS; OXYGEN; PEROVSKITE; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K; TIN OXIDES