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Title: CdTe X-ray detectors under strong optical irradiation

The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.
Authors:
;  [1]
  1. Institute for Microelectronics and Microsystems – Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy)
Publication Date:
OSTI Identifier:
22392037
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CADMIUM TELLURIDES; CDTE SEMICONDUCTOR DETECTORS; ELECTRIC FIELDS; IRRADIATION; PULSES; SCHOTTKY BARRIER DIODES; X RADIATION