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Title: Ferromagnetic-organic interfacial states and their role on low voltage current injection in tris-8-hydroxyquinloline (Alq{sub 3}) organic spin valves

Organic Spin Valves (OSVs) operate at small bias (<100 mV) when carrier injection should not occur due to injection barriers and in built potentials. We explore the consequences of hybrid-interface states between a ferromagnetic electrode and an organic semiconductor in OSV carrier injection. By temperature-dependent Dark Injection measurements, we observe hole trapping due to these filled states and measure a low thermal activation energy (∼100 meV) of the carrier density within OSVs. The small injection barrier is consistent with a significant interfacial potential, due to hybrid-interface state filling, overcoming the injection barrier due to the electrode work function—transport level mismatch.
Authors:
; ; ;  [1] ;  [2] ; ; ;  [3] ;  [3] ;  [4] ; ;  [5] ;  [1] ;  [2] ;  [4]
  1. College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)
  2. (United Kingdom)
  3. Materials Research Institute, School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)
  4. (China)
  5. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)
Publication Date:
OSTI Identifier:
22392036
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACTIVATION ENERGY; ANTIFERROMAGNETIC MATERIALS; CARRIER DENSITY; ELECTRODES; ORGANIC SEMICONDUCTORS; QUINOLINES; SPIN; TEMPERATURE DEPENDENCE; VALVES; WORK FUNCTIONS