Broadly tunable, high-power terahertz radiation up to 73 K from a stand-alone Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} mesa
- Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
- Wide Bandgap Materials Group, Optical and Electronic Materials Unit, Environment and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
- Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510 (Japan)
- Department of Physics, University of Central Florida, Orlando, Florida 32816-2385 (United States)
High-power, continuous, broadly tunable THz radiation from 0.29 to 1.06 THz, was obtained from the outer current-voltage characteristic (IVC) branch of a single stand-alone mesa of the high-transition temperature T{sub c} superconductor Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ}. The particular metallic film structures placed both beneath and atop the mesas resulted in more efficient heat dissipation, higher allowed applied dc voltages, larger IVC loops, wider emission temperature ranges, and much broader emission frequency tunability than obtained previously.
- OSTI ID:
- 22392023
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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