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Title: Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300 K vary from ∼2000 to 400 cm{sup 2}/V s and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.
Authors:
; ; ;  [1] ;  [2] ; ; ; ; ;  [3]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. Naval Postgraduate School, Monterey, California 93943 (United States)
  3. Solar Junction, Inc., San Jose, California 95131 (United States)
Publication Date:
OSTI Identifier:
22392017
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; CARRIER LIFETIME; DIFFUSION LENGTH; DOPED MATERIALS; ELECTRON MOBILITY; ELECTRONS; GALLIUM COMPOUNDS; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RECOMBINATION; TIME RESOLUTION