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Title: n{sup +}-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

We report on the low-temperature growth of heavily Si-doped (>10{sup 20 }cm{sup −3}) n{sup +}-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 × 10{sup −4} Ω·cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n{sup +}-GaN/2 dimensional electron gas contact resistivity of 0.11 Ω·mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
  2. Millimeter-Wave Electronics Group, ETH-Zürich, CH-8092 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22392015
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMMONIA; DOPED MATERIALS; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; SILICON; SURFACES