skip to main content

SciTech ConnectSciTech Connect

Title: Negative differential resistance in GaN tunneling hot electron transistors

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.
Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43202 (United States)
Publication Date:
OSTI Identifier:
22392014
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC CONDUCTIVITY; ELECTRONS; GALLIUM NITRIDES; OSCILLATORS; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS; TUNNEL EFFECT