skip to main content

SciTech ConnectSciTech Connect

Title: Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.
Authors:
;  [1] ;  [2] ;  [1] ;  [3]
  1. School of Physics, University of Wollongong, New South Wales 2522 (Australia)
  2. Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai (China)
  3. (China)
Publication Date:
OSTI Identifier:
22392013
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CADMIUM TELLURIDES; DOPED MATERIALS; ELECTRICAL INSULATORS; FERMI LEVEL; FREQUENCY DEPENDENCE; MERCURY TELLURIDES; QUANTUM WELLS; SCATTERING