Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

Journal Article · Mon Nov 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901967· OSTI ID:22392009

Simon, Roland B.; Anaya, Julian; Kuball, Martin ^[1]

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1. Center for Device Thermography and Reliability, H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)

The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates.

• OSTI ID: 22392009
• Journal Information: Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
GALLIUM NITRIDES
IMPURITIES
MAGNESIUM
OPTOELECTRONIC DEVICES
OXYGEN
PHONONS
STRAINS
THERMAL CONDUCTIVITY