skip to main content

SciTech ConnectSciTech Connect

Title: A charge transport study in diamond, surface passivated by high-k dielectric oxides

The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.
Authors:
; ; ;  [1]
  1. Division for Electricity, Department of Engineering Sciences, Box 534, Uppsala University, Uppsala SE-751 21 (Sweden)
Publication Date:
OSTI Identifier:
22392007
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CHARGE TRANSPORT; DIAMONDS; DIELECTRIC MATERIALS; FILMS; HAFNIUM OXIDES; HOLE MOBILITY; LAYERS; MONOCRYSTALS; PASSIVATION; PERFORMANCE; SURFACES; TIME-OF-FLIGHT METHOD