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Title: Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10{sup 19} to 10{sup 20} cm{sup −3} with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10{sup 19} to 10{sup 14} cm{sup −3} for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.
Authors:
; ; ; ; ;  [1] ; ; ;  [2] ;  [2] ;  [3]
  1. Harvard University, Cambridge, Massachusetts 02138 (United States)
  2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22392006
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ELECTRICAL PROPERTIES; ELECTRONS; LAYERS; OXYGEN COMPOUNDS; PHOTOVOLTAIC EFFECT; SULFUR CONTENT; THIN FILMS; ZINC; ZINC SULFIDES