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Title: Continuous tuning of W-doped VO{sub 2} optical properties for terahertz analog applications

Vanadium dioxide (VO{sub 2}), with its characteristic metal-insulator phase transition, is a prospective active candidate to realize tunable optical devices operating at terahertz (THz) frequencies. However, the abrupt phase transition restricts its practical use in analog-like continuous applications. Incorporation of tungsten is a feasible approach to alter the phase transition properties of thin VO{sub 2} films. We show that amplitude THz modulation depth of ∼65%, characteristic phase transition temperature of ∼40 °C, and tuning range larger than 35 °C can be achieved with W-doped VO{sub 2} films grown on sapphire substrates. W-doped VO{sub 2} films can also be used to suppress Fabry-Perot resonances at THz frequencies but at temperatures much lower than that observed for undoped VO{sub 2} films. The gradual phase transition temperature window allows for precise control of the W-doped VO{sub 2} optical properties for future analog based THz devices.
Authors:
 [1] ; ; ;  [2] ;  [3]
  1. Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 (United States)
  2. Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 (United States)
  3. Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)
Publication Date:
OSTI Identifier:
22391996
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; MODULATION; OPTICAL PROPERTIES; PHASE TRANSFORMATIONS; SAPPHIRE; THZ RANGE; TRANSITION TEMPERATURE; TUNGSTEN; TUNING; VANADIUM OXIDES