Characterizing intra-exciton Coulomb scattering in terahertz excitations

Journal Article · Mon Nov 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902431· OSTI ID:22391992

Zybell, S.; Eßer, F.; Helm, M. ^[1]; Bhattacharyya, J.; Winnerl, S.; Schneebeli, L.; Böttge, C. N.; Kira, M.; Koch, S. W. ^[2]; Andrews, A. M.; Strasser, G. ^[3]

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1. Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
2. Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)
3. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria)

An intense terahertz field is applied to excite semiconductor quantum wells yielding strong non-equilibrium exciton distributions. Even though the relaxation channels involve a complicated quantum kinetics of Coulomb and phonon effects, distinct relaxation signatures of Coulomb scattering are identified within time-resolved photoluminescence by comparing the experiment with a reduced model that contains all relevant microscopic processes. The analysis uncovers a unique time scale for the Coulomb scattering directly from experiments and reveals the influence of phonon relaxation as well as radiative decay.

• OSTI ID: 22391992
• Journal Information: Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COULOMB SCATTERING
EQUILIBRIUM
EXCITATION
PHONONS
PHOTOLUMINESCENCE
QUANTUM WELLS
RADIATIVE DECAY
RELAXATION
SEMICONDUCTOR MATERIALS
THZ RANGE
TIME RESOLUTION