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Title: Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.
Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
Publication Date:
OSTI Identifier:
22391975
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDES; MEMORY DEVICES; NITROGEN; SEMICONDUCTOR DEVICES; SPACE CHARGE; VACANCIES