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Title: Set statistics in conductive bridge random access memory device with Cu/HfO{sub 2}/Pt structure

The switching parameter variation of resistive switching memory is one of the most important challenges in its application. In this letter, we have studied the set statistics of conductive bridge random access memory with a Cu/HfO{sub 2}/Pt structure. The experimental distributions of the set parameters in several off resistance ranges are shown to nicely fit a Weibull model. The Weibull slopes of the set voltage and current increase and decrease logarithmically with off resistance, respectively. This experimental behavior is perfectly captured by a Monte Carlo simulator based on the cell-based set voltage statistics model and the Quantum Point Contact electron transport model. Our work provides indications for the improvement of the switching uniformity.
Authors:
; ; ; ; ; ; ;  [1] ; ; ;  [2]
  1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
  2. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193 (Spain)
Publication Date:
OSTI Identifier:
22391974
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COPPER; ELECTRONS; HAFNIUM OXIDES; MEMORY DEVICES; MONTE CARLO METHOD; PLATINUM; RANDOMNESS; SIMULATORS; STATISTICS; SWITCHES; TRANSPORT THEORY