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Title: Raman spectroscopy of GaP/GaNP core/shell nanowires

Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping (Sweden)
  2. Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States)
  3. Department of Physics, University of California, La Jolla, California 92093 (United States)
  4. Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)
Publication Date:
OSTI Identifier:
22391966
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; PHONONS; POLARIZATION; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SCATTERING; SURFACES; ZINC SULFIDES