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Title: Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes

We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs−Ta junction depends largely on the interfacial transparency, exhibiting distinct zero-bias behavior. For a relatively resistive interface, a broad conductance peak is observed at zero bias. When a transparent InAs−Ta interface is achieved, a zero-bias conductance dip appears with two coherent-peak-like features forming at bias voltages corresponding to the superconducting gap of Ta. The conductance spectra of the transparent InAs−Ta junction at different gate voltages can be fit well using the standard Blonder-Tinkham-Klapwijk theory.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22391952
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRODES; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; OPACITY; PROXIMITY EFFECT; QUANTUM WELLS; SUPERCONDUCTING JUNCTIONS; TANTALUM