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Title: High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6] ; ;  [7] ;  [1]
  1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films, City University of Hong Kong, HKSAR (China)
  2. (Canada)
  3. Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ (United Kingdom)
  4. Department of Mechanical and Materials Engineering and Department of Chemistry, University of Western Ontario, London, Ontario N6A 5B8 (Canada)
  5. State Key Laboratory in Ultra-Precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, HKSAR (China)
  6. Vacuum Electronics Ltd., London, Ontario N6K 5A2 (Canada)
  7. Department of Engineering Physics, Polytechnique Montréal, Montreal, Quebec H3A 3A7 (Canada)
Publication Date:
OSTI Identifier:
22391950
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; BORON CARBIDES; CARBON NITRIDES; FILMS; HYDROTHERMAL SYNTHESIS; MAGNETRONS; NANOSTRUCTURES; P-N JUNCTIONS; SILICA; SPUTTERING; SUBSTRATES; ZINC OXIDES