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Title: Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

The modulation of Schottky barrier height of metal/Ge inserting an amorphous Ge layer has been demonstrated. It is interested that the Schottky barrier height of Al/amorphous-Ge/n-Ge junctions is oscillated with increase of the a-Ge thickness from 0 to 10 nm, and when the thickness reaches above 10 nm, the Al/amorphous-Ge/n-Ge shows ohmic characteristics. Electron hopping through localized states of a-Ge layer, the alleviation of metal induced gap states, as well as the termination of dangling bonds at the amorphous-Ge/n-Ge interface are proposed to explain the anomalous modulation of Schottky barrier height.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. Department of Physics, Semiconductor Photonics Research Center, Xiamen university, Xiamen, Fujian 361005 (China)
Publication Date:
OSTI Identifier:
22391949
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMORPHOUS STATE; DOPED MATERIALS; ELECTRONS; GERMANIUM; INTERFACES; LAYERS; METALS; MODULATION; SEMICONDUCTOR JUNCTIONS; THICKNESS