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Title: Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

Precession electron diffraction is an efficient technique to measure strain in nanostructures by precessing the electron beam, while maintaining a few nanometre probe size. Here, we show that an advanced diffraction pattern treatment allows reproducible and precise strain measurements to be obtained using a default 512 × 512 DigiSTAR off-axis camera both in advanced or non-corrected transmission electron microscopes. This treatment consists in both projective geometry correction of diffraction pattern distortions and strain Delaunay triangulation based analysis. Precision in the strain measurement is improved and reached 2.7 × 10{sup −4} with a probe size approaching 4.2 nm in diameter. This method is applied to the study of the strain state in InGaAs quantum-well (QW) devices elaborated on Si substrate. Results show that the GaAs/Si mismatch does not induce in-plane strain fluctuations in the InGaAs QW region.
Authors:
; ; ; ; ;  [1] ;  [2] ; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2]
  1. Université Grenoble Alpes, F-38000 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22391947
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAMERAS; ELECTRON BEAMS; ELECTRON DIFFRACTION; FLUCTUATIONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM WELLS; SILICON; STRAINS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY