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Title: Giant enhancement of terahertz emission from nanoporous GaP

In this paper, we have studied the emission of terahertz radiation from nanoporous semiconductor matrices of GaP excited by the femtosecond laser pulses. We observe 3–4 orders of magnitude increase of terahertz radiation emission from the nanoporous matrix compared to bulk material. The effect is mainly related to drastic increase of the sample surface and pinning of conducting electrons to surface states. This result opens up a promising way to create powerful sources of terahertz radiation using nanoporous semiconductors.
Authors:
; ;  [1] ;  [2] ; ; ;  [3] ;  [1] ;  [4]
  1. Ioffe Institute, 26 Polytekhnicheskaya, St. Petersburg 194021 (Russian Federation)
  2. (Russian Federation)
  3. Center for Physical Sciences and Technology, 11 A. Goštauto, Vilnius LT-01108 (Lithuania)
  4. ITMO University, 49 Kronverkskiy Ave., St. Petersburg 19701 (Russian Federation)
Publication Date:
OSTI Identifier:
22391946
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; GALLIUM PHOSPHIDES; LASERS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SURFACES; THZ RANGE