skip to main content

Title: Carrier transport in graphite/Si{sub 3}N{sub 4}-nanobelt/PtIr Schottky barrier diodes

Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si{sub 3}N{sub 4}-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si{sub 3}N{sub 4} nanobelt surface are predominant in the charge transfer.
Authors:
 [1] ;  [2] ;  [2] ; ; ; ;  [3] ;  [1]
  1. Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan City 030024 (China)
  2. (China)
  3. Institute of Materials, Ningbo University of Technology, Ningbo City 315016 (China)
Publication Date:
OSTI Identifier:
22391936
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; CHARGE TRANSPORT; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; GRAPHITE; IRIDIUM; NANOSTRUCTURES; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SPACE CHARGE; SURFACES