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Title: Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup ¯}) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.
Authors:
 [1] ; ;  [1] ;  [2] ; ; ;  [3] ;  [1] ;  [4] ;  [5]
  1. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States)
  2. (United States)
  3. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)
  4. (Israel)
  5. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
Publication Date:
OSTI Identifier:
22391934
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ANNEALING; DEUTERIUM; DIELECTRIC MATERIALS; DOPED MATERIALS; HEAVY WATER; HYDROGEN 4; INTERFACES; NITRIC OXIDE; NUCLEAR REACTION ANALYSIS; PASSIVATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SILICON OXIDES