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Title: Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells

The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations.
Authors:
; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom)
  2. EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
  3. School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA (United Kingdom)
Publication Date:
OSTI Identifier:
22391933
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; CONDENSATES; EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTONS; POLARONS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SIMULATION; STRAINS