Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells
- Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom)
- EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
- School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA (United Kingdom)
The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations.
- OSTI ID:
- 22391933
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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