Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902023· OSTI ID:22391931

Han, Dong-Pyo; Kim, Hyunsung; Shim, Jong-In ^[1]; Shin, Dong-Soo ^[2]; Kim, Kyu-Sang ^[3]

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1. Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
2. Department of Applied Physics and Department of Bionanotechnology, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
3. Department of Applied Physics and Electronics, Sangji University, Wonju, Gangwon-do 220-702 (Korea, Republic of)

We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN-based blue light-emitting-diode (LED) by comparing the temperature-dependent characteristics of the electroluminescence (EL) efficiency, the EL spectra, and the current-voltage relation over a wide range of temperature (50–300 K). Based on these experimental results, we demonstrate that the simple ohmic potential drop in the Shockley diode equation is not sufficient to explain the experimental data when the severe carrier overflow to the p-(Al)GaN layer induces the efficiency droop in the LED device. The anomalous relation between current and voltage at cryogenic temperatures is explained by the space-charge-limited current formed by the overflown electrons, rather than by the increase of a constant series resistance in the p-(Al)GaN layer.

• OSTI ID: 22391931
• Journal Information: Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DOPED MATERIALS
EFFICIENCY
ELECTROLUMINESCENCE
GALLIUM NITRIDES
INDIUM COMPOUNDS
LIGHT EMITTING DIODES
SPACE CHARGE
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K